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Description of Individual Course Units| Course Unit Code | Course Unit Title | Type of Course Unit | Year of Study | Semester | Number of ECTS Credits | | Fİ110 | Semiconductors 2 | Elective | 1 | 2 | 6 |
| | Level of Course Unit | | Second Cycle | | Objectives of the Course | | The aim of this course is to analyze structural, electrical and optical properties of semiconductors by introducing the differences between semiconductors and Insulators or conductors. Besides, applications of semiconductors and characterization techniques of semiconductor devices will also be covered in this course. | | Name of Lecturer(s) | | Doç. Dr. Volkan ŞENAY | | Learning Outcomes | | 1 | To learn the electrical, magnetical and optical properties of the semiconductors. | | 2 | To learn the electrical, magnetical and optical properties of the insulators. | | 3 | To learn the experimental methods for determining the the electrical, magnetical and optical properties of the semiconductors. | | 4 | To establish a connection between semiconductor matters and the electronical devices. |
| | Mode of Delivery | | Normal Education | | Prerequisites and co-requisities | | None | | Recommended Optional Programme Components | | None | | Course Contents | | What is Semiconductor? Types of Semiconductors, General properties of Semiconductors, Introduction to Energy-Band Model in Solids, Charge Carriers, Extrinsic and Intrinsic Semiconductors, Fermi Energy, Electrical Conduction, Hall Effect, Semiconductor Devices; P-N Junctions, Transistors, Metal-Semiconductor Junctions, Optical Absorption, Luminescence. | | Weekly Detailed Course Contents | |
| 1 | Free Electron Theory of Metals, The Allowed Energies, Density of Allowed States, Fermi Level, Fermi-Dirac Statistics, Electronic Specific Heat, Thermionic Emission | | | | 2 | Electrical Conductivity, Thermal Conductivity, Wiedemann-Franz Law, Temperature Dependence of Electrical Resistivity, Effect of Impurities: Matthiessen’s Rule, Thermoelectric Power, Energy Bands in Solids, Bloch Theorem, Kronig-Penney Model | | | | 3 | Effective Mass, Reduced Zone Scheme, Approximate Solution Near the Zone Boundary, Tight-Binding Approximation, Orthogonalized Plane Wave Method, Pseudopotential Method, Cellular Method, Augmented Plane Wave Method | | | | 4 | Fermi Surface, Two Dimensional Square Lattice, Three Dimensional Lattices, Dynamics in an Elic Field, Dynamics in a Magnetic Field, Closed and Open Orbits, Area of the Orbit of the Electron in k-Space, Cyclotron Mass | | | | 5 | Experimental Techniques for Determination of Fermi Surfaces, de Haas-van Alphen Effect, Calculation of Resistivity and Conductivity Tensors for Anisotropic Materials, Hall Effect, Magnetoresistance and Fermi Surface | | | | 6 | Definition and General Properties, of semiconductors, Typical Energy Bands in Semiconductors, Differences between Insulators, Conductors and Semiconductors, Density of States, Charge Carriers | | | | 7 | Semiconductor Doping, Extrinsic and Intrinsic Semiconductors, Fermi Energy in Intrinsic Semiconductors, Fermi Energy in P and N type Semiconductors, Donor and Acceptor Levels | | | | 8 | Midterm Exam | | | | 9 | Electrical Properties of Semiconductors: Mobility, Conduction and Conduction Mechanisms | | | | 10 | Minority and Majority Carrier Concentrations, Carrier Lifetime and Diffusion Length Constants, Hall Effect in Semiconductors, Hall Constant | | | | 11 | Typical Energy Bands in Semiconductors, Amorphous Semiconductors and Their Properties, Mott Transport: Metallic Behavior of Semiconductors. | | | | 12 | Semiconductor Devices: P-N Junctions and Junction Properties, Depletion Region, Built-in Potential, Forward and Reverse Bias Conditions in P-N Junctions, Current Mechanisms, Junction Capacitance | | | | 13 | Photovoltaics, PNP and NPN Tansistors, Current Mechanisms, Power Gain, Tunnel Diode, Zener Diode, Gunn Diode, FETs, MOSFETs, Schottky Diodes (Metal-Semiconductor Junctions). | | | | 14 | Optical Properties of Semiconductors: Photocurrent, Optical Absorption, Luminescence, Photo- Luminescence, Electro- Luminescence, Cathode- Luminescence, Sample Questions. | | | | 15 | Review | | | | 16 | Final Exam | | |
| | Recommended or Required Reading | | Semiconductor Physics and Devices: Basic Principles, Donald A. Neaman, McGraw-Hill, 2003. Physics of Semiconductor Devices, S.M. Sze, Wiley, 2007. | | Planned Learning Activities and Teaching Methods | | | Assessment Methods and Criteria | |
| Midterm Examination | 1 | 100 | | SUM | 100 | |
| Final Examination | 1 | 100 | | SUM | 100 | | Term (or Year) Learning Activities | 40 | | End Of Term (or Year) Learning Activities | 60 | | SUM | 100 |
| | Language of Instruction | | Turkish | | Work Placement(s) | | None |
| | Workload Calculation | |
| Midterm Examination | 1 | 1 | 1 | | Final Examination | 1 | 2 | 2 | | Discussion | 14 | 2 | 28 | | Criticising Paper | 14 | 2 | 28 | | Self Study | 14 | 4 | 56 | | Individual Study for Mid term Examination | 7 | 4 | 28 | | Individual Study for Final Examination | 7 | 4 | 28 | |
| Contribution of Learning Outcomes to Programme Outcomes | | LO1 | 3 | 2 | 3 | 2 | 2 | 2 | 2 | 2 | 1 | 1 | | LO2 | 3 | 2 | 3 | 2 | 2 | 2 | 2 | 2 | 1 | 1 | | LO3 | 3 | 2 | 3 | 2 | 2 | 2 | 2 | 2 | 1 | 1 | | LO4 | 3 | 2 | 3 | 2 | 2 | 2 | 3 | 2 | 1 | 1 |
| | * Contribution Level : 1 Very low 2 Low 3 Medium 4 High 5 Very High |
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