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Description of Individual Course Units| Course Unit Code | Course Unit Title | Type of Course Unit | Year of Study | Semester | Number of ECTS Credits | | Fİ121 | Yarı İletkenler | Elective | 1 | 1 | 6 |
| | Level of Course Unit | | Second Cycle | | Objectives of the Course | | To bring together quantum mechanics, the quantum theory of solids, semiconductor material and device physics to provide a basis for understanding the characteristics, operation and limitations of semiconductor devices. | | Name of Lecturer(s) | | Doç. Dr. Volkan ŞENAY | | Learning Outcomes | | 1 | Student shall learn the crystal properties of semiconductors | | 2 | Students shall learn the how the quantum mechanical phenomena affects and directs the movement of an electron in a semiconductor | | 3 | Students shall comprehend the effect of Fermi-dirac probabilty distribution and Fermi level to the mobile carrier concentrations in semiconductors | | 4 | Students shall understand several carrier transport phenomena and also the effect of mobile carrier concentrations to the current | | 5 | Students shall be able to learn the dependance of the carrier concentrations with respect to temperature or other types of external excitations | | 6 | Students shall learn the basics of p-n junction |
| | Mode of Delivery | | Normal Education | | Prerequisites and co-requisities | | None | | Recommended Optional Programme Components | | None | | Course Contents | | Crystal structure of solids; introduction to quantum mechanics; physical meaning and applications of Schrödinger wave equation; Extensions of the wave theory to atoms; the energy-band concept; electrical conduction in solids; the concept of hole; density of the states function; Fermi-dirac probability distribution; the semiconductor in equilibrium; charge carriers in semiconductors; the intrinsic semiconductor; the extrinsic semiconductor; carrier transport phenomena; drift and diffusion mechanisms; non-equilibrium excess carriers in semiconductors;, basic structure of the pn junction; pn junction under zero applied bias, forward and reverse bias. | | Weekly Detailed Course Contents | |
| 1 | Crystal structure of solids, crystal lattices and miller indices | | | | 2 | Introduction to quantum mechanics, Schrödinger's wave equations, physical meaning of the wave function and applications | | | | 3 | The extension of wave theory to atoms, the one-electron atom | | | | 4 | Introduction to the quantum theory of solids, Energy-band concept, Allowed and forbidden energy bands in semiconductors | | | | 5 | Electrical conduction of solids, electron effectve mass, concept of the hole | | | | 6 | Density of state functions, Fermi-dirac probability distribution function, the derivation of mobile carrier concentrations | | | | 7 | The semiconductor in equilibrium, equilibrium distribution of electrons and holes, the intrinsic carrier concentration, the intrinsic Fermi-level position | | | | 8 | Midterm Exam | | | | 9 | Statistical mechanics | | | | 10 | the change of carrier concentrations with respect to temperature in n-type and p-type semiconductors, the neutrality condition | | | | 11 | Carrier transport phenomena, drift and diffusion mechanisms, the Einstein relation, the Hall effect | | | | 12 | Nonequilibrium excess carriers in semiconductors, carrier generation, carrier recombination, continuity equations | | | | 13 | The pn junction, basic structure and built in potential barrier, pn junction under zero-applied bias | | | | 14 | The pn junction under forward and reverse bias | | | | 15 | Review | | | | 16 | Final Exam | | |
| | Recommended or Required Reading | | Semiconductor Physics and Devices: Basic Principles, Donald A. Neaman, McGraw-Hill, 2003. Physics of Semiconductor Devices, S.M. Sze, Wiley, 2007. | | Planned Learning Activities and Teaching Methods | | | Assessment Methods and Criteria | |
| Midterm Examination | 1 | 100 | | SUM | 100 | |
| Final Examination | 1 | 100 | | SUM | 100 | | Term (or Year) Learning Activities | 40 | | End Of Term (or Year) Learning Activities | 60 | | SUM | 100 |
| | Language of Instruction | | Turkish | | Work Placement(s) | | None |
| | Workload Calculation | |
| Midterm Examination | 1 | 1 | 1 | | Final Examination | 1 | 2 | 2 | | Attending Lectures | 14 | 3 | 42 | | Discussion | 14 | 1 | 14 | | Criticising Paper | 14 | 2 | 28 | | Self Study | 14 | 2 | 28 | | Individual Study for Mid term Examination | 7 | 3 | 21 | | Individual Study for Final Examination | 7 | 3 | 21 | | Reading | 14 | 1 | 14 | |
| Contribution of Learning Outcomes to Programme Outcomes | | LO1 | 3 | 2 | 2 | 2 | 2 | 2 | 2 | 3 | 1 | 1 | | LO2 | 3 | 2 | 2 | 2 | 2 | 2 | 2 | 3 | 1 | 1 | | LO3 | 3 | 2 | 2 | 2 | 2 | 2 | 2 | 3 | 1 | 1 | | LO4 | 3 | 2 | 2 | 2 | 2 | 2 | 2 | 3 | 1 | 1 | | LO5 | 3 | 2 | 2 | 2 | 2 | 2 | 2 | 3 | 1 | 1 | | LO6 | 3 | 2 | 2 | 2 | 2 | 2 | 2 | 3 | 1 | 1 |
| | * Contribution Level : 1 Very low 2 Low 3 Medium 4 High 5 Very High |
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