BAYBURT University Information Package / Course Catalogue

Home Information on the Institution Information on Degree Programmes General Information for Students
Description of Individual Course Units
Course Unit CodeCourse Unit TitleType of Course UnitYear of StudySemesterNumber of ECTS Credits
Fİ103Kristal Büyütme TeknikleriElective116
Level of Course Unit
Second Cycle
Objectives of the Course
The aim of this course is to have knowledge about crystal growth techniques. Among these techniques, one of the most important techniques of epitaxial enlargement and its application areas will be learned.
Name of Lecturer(s)
Learning Outcomes
1Students will have information about crystal growth techniques.
2Students will have information about epitaxial growth methods and application areas.
Mode of Delivery
Normal Education
Prerequisites and co-requisities
None
Recommended Optional Programme Components
None
Course Contents
Development of crystal growth, Volumetric crystal magnification techniques, Liquid phase growth, Czochralski (CZ) crystal magnification technique, furnace, tensile and rotating mechanisms, Brigman crystal magnification technique, Crystal defects, Vacuum, Ultra high vacuum conditions and techniques, Kinetic theory of gases, Micro and nano structured semiconductors, Thin films and compound semiconductor crystals, single and multilayer structures, What is epitaxy? Epitaxial crystal growth and techniques.
Weekly Detailed Course Contents
WeekTheoreticalPracticeLaboratory
1Development of crystal growth
2Bulk crystal growth techniques; liquid phase growth
3Czochralski (CZ) crystal growth technique; furnace, pull and turn mechanisms
4Bridgman crystal growth technique, Crystal defects
5Vacuum, Ultra high vacuum conditions and techniques, kinetic theory of gases
6Micro and nano structured semiconductors, thin films and semi-crystalline crystals
7Single and multilayer structures
8Midterm
9Epitaxial crystal growth and techniques
10Chemical vapor phase accumulation/epitaxy (CVD)
11Metalorganic chemical vapor deposition (MOCVD) technique
12Molecular beam epitaxy (MBE) technique
13MBE system firing -convection; Internal measurement techniques; RHEED, AES, Mass spectrometer
14Basic growth processes in MBE, Growth of compound semiconductor structures, growth of ternary quaternary alloys
15Review
16Final
Recommended or Required Reading
1. Scheel, Hans J., and Tsuguo Fukuda. Crystal growth technology. New York: Wiley, 2003. 2. Dhanaraj, G., Byrappa, K., Prasad, V., & Dudley, M. (Eds.). (2010). Springer handbook of crystal growth. Springer Science & Business Media. 3. Müller, Georg, Jean-Jacques Métois, and Peter Rudolph, eds. Crystal Growth-From fundamentals to technology. Elsevier, 2004.
Planned Learning Activities and Teaching Methods
Assessment Methods and Criteria
Term (or Year) Learning ActivitiesQuantityWeight
Midterm Examination1100
SUM100
End Of Term (or Year) Learning ActivitiesQuantityWeight
Final Examination1100
SUM100
Term (or Year) Learning Activities40
End Of Term (or Year) Learning Activities60
SUM100
Language of Instruction
Work Placement(s)
None
Workload Calculation
ActivitiesNumberTime (hours)Total Work Load (hours)
Midterm Examination111
Final Examination122
Attending Lectures14342
Discussion14114
Report Preparation14228
Criticising Paper14228
Individual Study for Mid term Examination7321
Individual Study for Final Examination7321
Reading14114
TOTAL WORKLOAD (hours)171
Contribution of Learning Outcomes to Programme Outcomes
PO
1		PO
2		PO
3		PO
4		PO
5		PO
6		PO
7		PO
8		PO
9		PO
10
LO1 5        
LO2          
* Contribution Level : 1 Very low 2 Low 3 Medium 4 High 5 Very High